北京11选5

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UniversityWafer 硅片

简要描述:

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,

Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide

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